Photoluminescence and electric spectroscopy of dislocation-induced electronic levels in semi-insulated CdTe and CdZnTe
2010
Abstract
We studied deformation-induced defects in semi-insulating CdTe and CdZnTe by infrared photo-luminescence(PL),contactless photoconductivity and resistivity.Plastic deformation increased the concentrations of grown-in defects,namely,those of an important midgap level EC-0.74 eV in CdTe and Cd1-xZnxTe (x~0.1), the materials of choice in today’s X-ray and gamma ray detector technology.We confirmed the direct correlation between Y-emission and the dislocation density in both compounds.