Modification of terminating species and band alignment at the interface between alumina films and metal single crystals
Abstract
Thin epitaxial alumina films were grown on Cu(111) Cu-9 at %Al(111) Ni(111) and NiAl(110) single crystals The alumina films grew in such a manner that hexagonal or pseudo hexagonal oxygen lattices were parallel to the surface of the substrates Photoelectron spectra were obtained either with synchrotron or Al K-alpha radiation We measured Al 2p spectra and determined the atomic species that terminated the interface between the alumina films and the substrates The influence of Al in the substrates on the species that terminated the Interface has been discussed based on thermodynamics From valence band spectra p-type Schottky barrier height (energy difference between the Fermi level of the metallic substrates and the valence band maximum of the alumina films band offset) was determined Differences in Interface terminating species resulted in variations in p-type Schottky barrier height or band alignment