Abstract
This doctoral thesis deals with analysis of carrier dynamics in semiconductor nanocrystals and nanostructures by methods of ultrafast laser spectroscopy. In three chapters silicon, InAs/GaAs, InAs/AlAs and CdSSe materials are studied.
Silicon nanocrystals prepared by sol-gel method were measured by time-resolved luminescence method with various time resolutions, two-photon absorption and Z-scan method. A model describing findings was suggested.
InAs was well measured by upconversion method and gained knowledge appeared to be fully consistent with quantum model. CdSe material was examined in two basic forms – thin films of nanocrystals prepared by chemical deposition and nanocrystals in comercial filters.
In both cases all questions regarding influencing optical properties of nanocrystals by modification of their growth were answered. Keywords: ultrafast laser spectroscopy, nanocrystal, semiconductor nanostructure