Dislocation-induced electronic levels in semi-insulated CdTe

Abstrakt

Deformation-induced defects in semi-insulating CdTe and CdZnTe were studied by photoluminescence. The Y-band at 1,474 eV and midgap levels intesify inside and near deformed areas of the samples.

The findings demonstrate that dislocation=induced defects degrade charge collection in gamma radiation detectors.

Klíčová slova

• Dislocation-induced
• electronic
• levels
• semi-insulated
• CdTe