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Photoluminescence measurements of zero-phonon optical transitions in silicon nanocrystals

Publikace na Matematicko-fyzikální fakulta |
2011

Tento text není v aktuálním jazyce dostupný. Zobrazuje se verze "en".Abstrakt

Optical transitions in silicon nanocrystals with different surface passivations were probed at low temperatures on a single-particle level. A type of quasidirect recombination process, different from the quantum-confined exciton transition, is identified.

The luminescence spectra have different emission energies, but the contribution of a no-phonon transition is significantly higher than expected from the quantum-confinement model. Its relative strength was found to be temperature dependent, suggesting spatial localization of excitons as a possible origin.