Characterization of H-plasma treated ZnO crystals by positron annihilation and atomic force microscopy
Abstrakt
Nominally undoped, hydrothermally grown ZnO single crystals have been investigated before and after exposure to remote H-plasma. Defect characterization has been made by two complementary techniques of positron annihilation: positron lifetime spectroscopy and coincidence Doppler broadening.
The high-momentum parts of the annihilation photon momentum distribution have been calculated from first principles in order to assist in defect identification. The positron annihilation results are supplemented by Atomic Force Microscopy for characterization of the crystal surface.
It was found that virgin ZnO crystal contains Zn-vacancies associated with hydrogen. H-plasma treatment causes a significant reduction in concentration of these complexes.
Physical mechanism of this effect is discussed in the paper.