Lattice strain of hydrogen-implanted silicon: Correlation between X-ray scattering analysis and ab-initio simulations
2013
Abstract
Hydrogen implanted silicon has been studied using high resolution X-ray scattering. Strain induced by implantation has been measured as a function of implantation dose.
The dependence of strain with implanted dose shows different regimes starting from linear to quadratic and saturation. The observed strain is consistent with ab-initio and elasticity calculations.
Strain rate changes can be associated to the predominant location of hydrogen in bond center location. (C) 2013 AIP Publishing LLC