Development of n(+) -in-p large-area silicon microstrip sensors for very high radiation environments-ATLAS12 design and initial results
Abstrakt
We have been developing a novel radiation tolerant n(+)-in-p silicon microstrip sensor for very high radiation environments, aiming for application in the high luminosity large hadron collider. The sensors are fabricated in 6 in., p-type, float zone wafers, where large area strip sensor designs are laid out together with a number of miniature sensors.
Radiation tolerance has been studied with ATLAS07 sensors and with independent structures. The ATLAS07 design was developed into new ATLAS12 designs.
The ATLAS12A large-area sensor is made towards an axial strip sensor and the ATLAS12M towards a stereo strip sensor. New features to the ATLAS12 sensors are two dicing lines: standard edge space of 910 pm and slim edge space of 450 pm, a gated punch-through protection structure, and connection of orphan strips in a triangular corner of stereo strips.
We report the design of the ATLAS12 layouts and initial measurements of the leakage current after dicing and the resistivity of the wafers.