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Characterisation of Defects in ZnO Implanted by Hydrogen

Publikace na Matematicko-fyzikální fakulta |
2015

Tento text není v aktuálním jazyce dostupný. Zobrazuje se verze "en".Abstrakt

In the present work, defects created by implantation of hydrothermally grown ZnO single crystals of high quality with H+ ions were investigated by positron annihilation lifetime (LT) spectroscopy combined with measurements of optical transmittance (OT) and photoluminescence (PL). First, zinc vacancies attached with one hydrogen impurity (VZn - 1H) atom were identified in the virgin ZnO single crystal.

The ZnO single crystals were then bombarded by H+ ions with the energy of 2.5 MeV to the fluence of 10 ^ 16 cm-2. It was found that VZn - VO divacancies were introduced into ZnO by H+-implantation.

Effects of H+-implantation on the optical activity of defects in ZnO lattice are characterised in the light of the present OT and PL data.