Publikace na Matematicko-fyzikální fakulta |
2016
Abstrakt
We present results on CoFeB/MgO/CoFeB pseudo-spin-valve magnetic tunnel junctions (MTJ) with particular focus on the ion beam etching process of the pillars.
The samples were etched at the angle of 45o using different photoresist layer thicknesses, which significantly influences the resulting tunnel magnetoresistance ratio (TMR) and junction stability. The shape of the resulting pillars was investigated by AFM.
In-plane TMRs of 270-276 % were reproducibly achieved at room temperature.