Effect of Mg2+ ions co-doping on luminescence and defects formation processes in Gd3(Ga,Al)5O12:Ce single crystals
Abstrakt
Photo- and radioluminescence and thermally stimulated luminescence characteristics of Ce3+ - doped and Ce3+, Mg2+ co-doped Gd3(Ga,Al)5O12 (GAGG) single crystals of similar composition are investigated in the 9-500 K temperature range. The Ce3+ - related luminescence spectra and the photoluminescence decay kinetics in these crystals are found to be similar.
Under photoexcitation in the Ce3+ - and Gd3+ related absorption bands, no prominent rise of the photoluminescence intensity in time is observed neither in GAGG:Ce,Mg nor in GAGG:Ce crystals. The afterglow is strongly reduced in GAGG:Ce,Mg as compared to GAGG:Ce, and the afterglow decay kinetics is much faster.
Co-doping with Mg2+ results in a drastic decrease of the thermally stimulated luminescence (TSL) intensity in the whole investigated temperature range and in the appearance of a new complex Mg2+ - related TSL glow curve peak around 285 K. After irradiation in the Ce3+ - related 3.6 eV absorption band, the TSL intensity in GAGG:Ce,Mg is found to be comparable with that in the GAGG:Ce epitaxial film of similar composition.
The Mg2+ induced changes in the concentration, origin and structure of the crystal lattice defects and their influence on the scintillation characteristics of GAGG:Ce,Mg are discussed.