Luminescence and scintillation properties of liquid phase epitaxy grown Y2SiO5: Ce single crystalline films
Abstract
Luminescence and scintillation properties of Y2SiO5: Ce single crystalline film (YSO:Ce-LPE) grown by the liquid phase epitaxy technique are investigated and compared to the bulk Czochralski-grown YSO:Ce single crystal (YSO:Ce-SC). The light yield (LY) and energy resolution are measured using an R6231 photomultiplier under excitation with alpha-and gamma-rays.
At 662 keV gamma-rays, the LY value of 12,410 ph/MeV obtained for YSO: Ce -LPE is lower than that of 20,150 ph/MeV for YSO: Ce -SC whereas the comparable LY value and energy resolution are obtained under excitation with 5.5 MeV alpha- rays. The ratio of LY under excitation with alpha- and gamma- rays (alpha/gamma ratio) is determined.
Dependence of LY on an amplifier shaping time (0.5-12 mu s) is also measured.