Structure and properties of Hf-O-N films prepared by high-rate reactive HiPIMS with smoothly controlled composition
Abstrakt
Hafnium oxynitride ceramics were prepared in the form of thin films by high-power impulse magnetron sputtering of Hf in various Ar+O-2+N-2 gas mixtures. Smooth composition control was achieved by maximizing the degree of dissociation in plasma, suppressing the importance of the difference between reactivities of undissociated O-2 and N-2.
The application potential of the films was further enhanced by extremely high deposition rates (e.g. 230 nm/min for stoichiometric HfO2; achieved by feedback pulsed reactive gas flow control), low deposition temperatures (<140 degrees C) and not using any substrate bias. We focus on the relationships between elemental composition, phase structure, and optical, electrical, mechanical and hydrophobic properties of the materials.
We quantify the evolution of smoothly controlled film properties along the transition from an oxide to a nitride, such as increasing extinction coefficient, decreasing electrical resistivity, increasing hardness or increasing water droplet contact angle.