Publication at Faculty of Science |
2017
Abstract
Two-dimensional (2D) materials promote the development of nanoelectronic devices, which requires candidate systems with both a high carrier mobility and a moderate electronic bandgap. We present a first principles calculation of the intrinsic carrier mobilities of pristine (1L-AlN) and hydrogenated (1L-AlN-H-2) monolayer AlN.
Numerical results reveal that 1L-AlN shows a hole-dominated ultra-large carrier mobility (up to 5277cm(2)V(-1)s(-1)). Upon full hydrogenation (1L-AlN-H-2), the polarity of carrier mobility is reversed from hole dominated to electron dominated.
This tunable polarity of intrinsic carrier mobility indicates monolayer AlN as a promising candidate for future nanoelectronics.