Iron-Intercalated Zirconium Diselenide Thin Films from the Low-Pressure Chemical Vapor Deposition of [Fe(eta(5)-C5H4Se)(2)Zr(eta(5)-C5H5)(2)](2)

Abstrakt

Transition metal chalcogenide thin films of the type FexZrSe2 have applications in electronic devices, but their use is limited by current synthetic techniques. Here, we demonstrate the synthesis and characterization of Fe-intercalated ZrSe2 thin films on quartz substrates using the low-pressure chemical vapor deposition of the single-source precursor [Fe(eta(5)-C5H4Se)(2)Zr(eta(5)-C5H5)(2)](2).

Powder X-ray diffraction of the film scraping and subsequent Rietveld refinement of the data showed the successful synthesis of the Fe-0.14 ZrSe2 phase, along with secondary phases of FeSe and ZrO2. Upon intercalation, a small optical band gap enhancement (E-g(direct)(opt) = 1.72 eV) is detected in comparison with that of the host material.

Klíčová slova

• transition-metal dichalcogenides
• electrochemical characteristics
• electrical-properties
• electronic-properties
• optical-properties
• zrse2
• raman
• phase
• gap
• particles