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Polaronic interaction in a single modulation-doped GaAs quantum well with the Feynman-Hellwarth-Iddings-Platzman approximation

Publikace na Matematicko-fyzikální fakulta |
2021

Tento text není v aktuálním jazyce dostupný. Zobrazuje se verze "en".Abstrakt

Absolute far-infrared magnetotransmission experiments have been performed in magnetic fields up to 33.5 T on a series of single GaAs quantum wells doped with different electron concentrations. The transmission spectra have been simulated with a multilayer dielectric model.

The imaginary part of the optical response function, which reveals singular features related to the electron-phonon interactions, has been extracted. In addition to the expected polaronic effects due to the longitudinal-optical phonon of GaAs, additional interactions with interface phonons are observed.

The main interaction is analyzed quantitatively with the Feynman-Hellwarth-Iddings-Platzman model, which is shown to predict correctly the concentration of carriers beyond which the Frohlich interaction is completely screened.