Publication at Faculty of Mathematics and Physics |
2022
Abstract
SiC is considered a perspective material in advanced nuclear systems as well as for electronic or spintronic applications, which require an ion implantation process. In this regard, two sets of 6H-SiC samples were implanted with i) 2.5 MeV Fe ions and ii) 2.5 MeV Fe ions and co-implanted 500 keV He ions at room temperature and then annealed at 1500 °C for 2 h.
The microstructure evolution and Fe diffusion behavior before and after annealing were characterized and analyzed.