Abstract
The recombination of D3 ions with electrons was studied in plasma over a broad range of pressures and temperatures varying from 77 K up to 300 K using flowing afterglow (FALP) apparatus. Reported is observation of dependence of overall recombination process on temperature, helium buffer gas pressure and hydrogen partial pressure.
The effective plasma recombination rate is driven by binary D3 e- and ternary D3 e- He processes with the rate coefficients aplhaBin(300 K) = (2.7 . 0.9)x10-8 cm3s-1 and KHe(300 K) = (1.8 . 0.6)x10-25cm6s-1 respectively.