Publication at Faculty of Mathematics and Physics |
2008
Abstract
(CdZn)Te with the composition of 3% Zn and In-doped CdTe single crystals were annealed at various annealing temperatures and under various Cd or Te pressures with the aim of eliminating Te or Cd inclusions. Te inclusions were reduced by Cd-saturated annealing at temperatures above 660 oC.
Only small residual dark spots, located at the original position of as-grown inclusions, were observed after annealing. The size of Cd inclusions was reduced by Te-rich annealing at temperatures higher than 700 oC.