Correlation of electrical and optical properties with charge collection efficiency of In-doped and In+Si co-doped CdTe

Abstract

The effect of Si co-doping on electrical, optical and spectroscopic properties of In-doped CdTe was investigated. The concentration of Si atoms in the charge was 1E17 cm-3.

All Si co-doped samples were n-types, with the resistivity higher than 1E9

Keywords

• Correlation
• electrical
• optical
• properties
• charge
• collection
• efficiency
• In-doped
• In+Si
• co-doped
• CdTe