Structural and charge trapping properties of two bilayer (Ge+SiO2)/SiO2 films deposited on rippled substrate

Abstract

We studied the structure and charge trapping in volumes of Ge quantum dots in bilayers (Ge+SiO2)/SiO2 grown on rippled substrates

Keywords

• Structural
• charge
• trapping
• properties
• two bilayer
• (Ge+SiO2)/SiO2
• films
• deposited
• rippled
• substrate