- X-ray diffuse scattering from threading dislocations in epitaxial GaN layers2010 | Faculty of Mathematics and Physics
- Diffuse X-ray scattering from GaN/SiC (0001) thin films2006 | Faculty of Mathematics and Physics
- X-ray in-plane scattering investigation of GaN nanorods (Article No. 103504)2008 | Faculty of Mathematics and Physics
- Blue light-emitting diodes on the basis of GaN - foundations of revolutionary lighting technology2015 | Faculty of Mathematics and Physics
- Growth and characterization of GaN:Mn layers by MOVPE2008 | Faculty of Mathematics and Physics
- XPS study of the formation of ultrathin GaN film on GaAs (100)2008 | Faculty of Mathematics and Physics
- X-ray scattering on GaN thin films, Monte Carlo simulation2009 | Faculty of Mathematics and Physics
- In-situ doping and implantation of GaN layers with Mn +12009 | Faculty of Mathematics and Physics
- Baj Gaňo: literary figure in the second, folklore life2014 | Faculty of Arts
- Nigun ba-derech le-gan Eden2018 | Publication without faculty affiliation
- Mn doped GaN thin films and nanoparticles2012 | Faculty of Mathematics and Physics
- Strain relaxation of InGaN/GaN Strain relaxation of InGaN/GaN by formation of V-pits by formation of V-pits2019 | Faculty of Mathematics and Physics
- Improvement of luminescence properties of n-GaN using TEGa precursor2020 | Faculty of Mathematics and Physics
- David Gans's Magen David: Text and Context2022 | Faculty of Arts
- Diffuse x-ray scattering from stacking faults in a-plane GaN epitaxiallayers2011 | Faculty of Mathematics and Physics
- David Gans : The Jewish Renaissance Historian from Prague2016 | Faculty of Arts
- Relation between Ga Vacancies, Photoluminescence, and Growth Conditions of MOVPE-Prepared GaN Layers2022 | Faculty of Mathematics and Physics
- A Jazz Spy? The Music Enthusiast Jiří Gans from České Budějovice in the Gear of Power2009 | Publication without faculty affiliation
- Modrá záře nad GaN1997 | Faculty of Mathematics and Physics
- David gans (1541-1613) and the World Chronicle Tsemah David (1592): A Jewish Hhistorian in the Time of Confesionalization2022 | Faculty of Arts
- Grazing-incidence x-ray diffraction from GaN epitaxial layers withthreading dislocations2011 | Faculty of Mathematics and Physics
- V-pits formation in InGaN/GaN: influence of threading dislocations and indium content2022 | Faculty of Mathematics and Physics
- Electron Transport Properties in High Electron Mobility Transistor Structures Improved by V-Pit Formation on the AlGaN/GaN Interface2023 | Faculty of Mathematics and Physics
- David Gans and Yom-Tov Lipmann Heller: Two Prague Jewish Scholars of the Late 16th and Early 17th Centuries2011 | Faculty of Arts
- Three-dimensional reciprocal space mapping with a two-dimensional detector as a low-latency tool for investigating the influence of growth parameters on defects in semipolar GaN2015 | Faculty of Mathematics and Physics
- Steady-state and time-resolved near-field optical spectroscopy of GaN/AlN quantum dots and InGaN/GaN quantum wells2002 | Publication without faculty affiliation
- Rapid thermal synthesis of GaN nanocrystals and nanodisks2013 | Faculty of Mathematics and Physics
- Anisotropic carrier mobility in buckled two-dimensional GaN2017 | Faculty of Science
- Three-dimensional reciprocal space mapping of diffuse scattering for the study of stacking faults in semipolar (11(2)over-bar2) GaN layers grown from the sidewall of an r-patterned sapphire substrate2013 | Faculty of Mathematics and Physics