- Strain relaxation of InGaN/GaN Strain relaxation of InGaN/GaN by formation of V-pits by formation of V-pits2019 | Faculty of Mathematics and Physics
- Impact of Ge doping on MOVPE grown InGaN layers2023 | Faculty of Mathematics and Physics
- Two "Proletarian" Novels of Colonial Korea: Ingan munje and Hwanghon2023 | Faculty of Arts
- Diffuse X-ray scattering from local chemical inhomogeneities in InGaN layers2018 | Faculty of Mathematics and Physics
- Indium Incorporation into InGaN Quantum Wells Grown on GaN Narrow Stripes2019 | Faculty of Mathematics and Physics
- Influence of a low-temperature capping on the crystalline structure and morphology of InGaN quantum dot structures2014 | Faculty of Mathematics and Physics
- Strain relaxation in InGaN/GaN epilayers by formation of V-pit detects studied by SEM, XRD and numerical simulations2021 | Faculty of Mathematics and Physics
- V-pits formation in InGaN/GaN: influence of threading dislocations and indium content2022 | Faculty of Mathematics and Physics
- A secret luminescence killer in deepest QWs of InGaN/GaN multiple quantum well structures2020 | Faculty of Mathematics and Physics
- Steady-state and time-resolved near-field optical spectroscopy of GaN/AlN quantum dots and InGaN/GaN quantum wells2002 | Publication without faculty affiliation