- Electron Transport Properties in High Electron Mobility Transistor Structures Improved by V-Pit Formation on the AlGaN/GaN Interface2023 | Faculty of Mathematics and Physics
- Impact of Ge doping on MOVPE grown InGaN layers2023 | Faculty of Mathematics and Physics
- In-situ doping and implantation of GaN layers with Mn +12009 | Faculty of Mathematics and Physics
- Strain relaxation in InGaN/GaN epilayers by formation of V-pit detects studied by SEM, XRD and numerical simulations2021 | Faculty of Mathematics and Physics