- X-ray diffuse scattering from defects in nitrogen-doped Czochralski grown silicon wafers2005 | Publication without faculty affiliation
- Effect of Silicon Nitride Layers on the Minority Carrier Diffusion Length in c-Si Wafers2006 | Faculty of Mathematics and Physics
- Method for determination of diffusion length of minority carriers in silicon wafers by measurement of the surface photovoltage.Publication without faculty affiliation
- Influence of Silicon Nitride Layers on the Minority Carrier Diffusion Length In Silicon Wafers2006 | Faculty of Mathematics and Physics
- Interpretation of minority carrier diffusion length measurements in thin silicon wafers2003 | Faculty of Mathematics and Physics, Central Library of Charles University
- Study of indium phosphide wafers treated by long time annealing at high temperatures2004 | Faculty of Mathematics and Physics
- Method of surface photovoltage extended to silicon wafers and solar cells of arbitrary thickness2001 | Faculty of Mathematics and Physics, Central Library of Charles University
- Method of the surface photovoltage extended to silicon wafers and solar cells of arbitrary thickness2002 | Publication without faculty affiliation
- Charge transport in semi insulating bulk 4H-Silicon carbide: Effect of metallization and wafer homogeneity2022 | Faculty of Mathematics and Physics
- Pure and intentionally doped indium phospide wafers treated by long time annealing at high temperatures2003 | Faculty of Mathematics and Physics
- Laser-assisted two-step glass wafer metallization: An experimental procedure to improve compatibility between glass and metallic films2023 | Faculty of Mathematics and Physics
- Structural investigations of the alpha(12) Si-Ge superstructure2015 | Faculty of Mathematics and Physics
- Hydrophobic/hydrophilic interactions of cytochrome c with functionalized self-assembled monolayers on silicon2003 | Faculty of Science
- Hydrophobic/hydrophilic interactions of cytochrome c with functionalized self-assembled monolayers on silicon2003 | Faculty of Mathematics and Physics, First Faculty of Medicine
- Influence of Silicon Nitride Layers on the Minority Carrier Diffusion Length2006 | Faculty of Mathematics and Physics
- Critical role of the sample preparation in experiments using piezoelectric actuators inducing uniaxial or biaxial strains2013 | Faculty of Mathematics and Physics
- Compensation and Photosensitivity in CdTe Doped With Indium2009 | Faculty of Mathematics and Physics
- Contribution of surface photovoltage method to diagnostics of materials for solar cells2008 | Faculty of Mathematics and Physics
- Optimization of Anodic Etching of Crystalline Silicon for Fabrication of Luminescent Silicon Nanocrystals for Chemosensor Applications2022 | Faculty of Mathematics and Physics, Faculty of Science
- Introducing Well-Defined Nanowrinkles in CVD Grown Graphene2019 | Faculty of Mathematics and Physics
- Material for preparation od CdTe detectorsPublication without faculty affiliation
- Improvement of the signal to noise ratio for fluorescent imaging in microfluidic chips2022 | Faculty of Science
- Development of n(+) -in-p large-area silicon microstrip sensors for very high radiation environments-ATLAS12 design and initial results2014 | Faculty of Mathematics and Physics
- Comparison of Dielectric Barrier Discharge Modes Fungicidal Effect on Candida Albicans Growth2013 | First Faculty of Medicine
- Sn-CeO2 thin films prepared by rf magnetron sputtering: XPS and SIMS study2009 | Faculty of Mathematics and Physics
- Characterization of CZT crystals grown by the boron oxide encapsulated vertical Bridgman technique for the preparation of X-ray imaging detectors2011 | Faculty of Mathematics and Physics
- Pt2+,4+ ions in CeO2 rf-sputtered thin films2010 | Faculty of Mathematics and Physics
- Platinum-Doped CeO2 Thin Film Catalysts Prepared by Magnetron Sputtering2010 | Faculty of Mathematics and Physics
- Polarity determination of wurtzite-type crystals using hard x-ray photoelectron diffraction2011 | Faculty of Mathematics and Physics
- Investigation of deep levels in semi-insulating vanadium-doped 4H-SiC by photocurrent spectroscopy2021 | Faculty of Mathematics and Physics