- Influence of growth rate on charge transport in GaSb homojunctions prepared by metalorganic vapor phase epitaxy2004 | Matematicko-fyzikální fakulta
- In-situ implantace a dopovani vrstev GaN atomy Mn +12009 | Matematicko-fyzikální fakulta
- Indium Incorporation into InGaN Quantum Wells Grown on GaN Narrow Stripes2019 | Matematicko-fyzikální fakulta
- Evidence for two growth modes during tungsten oxide vapor deposition on mica substrates2014 | Matematicko-fyzikální fakulta
- A secret luminescence killer in deepest QWs of InGaN/GaN multiple quantum well structures2020 | Matematicko-fyzikální fakulta
- Electron Transport Properties in High Electron Mobility Transistor Structures Improved by V-Pit Formation on the AlGaN/GaN Interface2023 | Matematicko-fyzikální fakulta
- Density of bunched threading dislocations in epitaxial GaN layers as determined using X-ray diffraction2018 | Matematicko-fyzikální fakulta
- High resolution synchrotron X-ray studies of phase separation phenomena and the scaling law for the threading dislocation densities reduction in high quality AlGaN heterostructure2013 | Matematicko-fyzikální fakulta
- Impact of Ge doping on MOVPE grown InGaN layers2023 | Matematicko-fyzikální fakulta
- Strain relaxation in InGaN/GaN epilayers by formation of V-pit detects studied by SEM, XRD and numerical simulations2021 | Matematicko-fyzikální fakulta
- Growth and characterization of stacking fault reduced GaN( 1 0 1($)over-bar 3) on sapphire2013 | Matematicko-fyzikální fakulta
- Relation between Ga Vacancies, Photoluminescence, and Growth Conditions of MOVPE-Prepared GaN Layers2022 | Matematicko-fyzikální fakulta
